Interacting fermions in narrow-gap semiconductors with band inversion

Inter-band Tunnel Transistor Architecture using Narrow Gap Semiconductors

The inter-band tunnel transistor (TFET) architecture features a subkT/q sub-threshold slope operation and can potentially support high ION/IOFF ratios over small gate voltages. Based on twodimensional numerical simulations, we investigate TFET in various material systems ranging from silicon to indium arsenide. TFET performance can be enhanced when heterojunctions are employed at the source sid...

Semiconductor waveguide inversion in disordered narrow band-gap materials

It has been previously demonstrated that it is possible to form the NOT gate in a coupled semiconductor waveguide structure in III–V materials. However, to this point, investigations have assumed the materials to be perfect. In this article, we present results of a semiconductor waveguide inverter in GaAs and InAs with disordered material effects included in the simulation. The behavior of the ...

Terahertz radiation emitters from narrow-gap semiconductors

Fermion space charge in narrow band-gap semiconductors, Weyl semimetals, and around highly charged nuclei

The field of charged impurities in narrow band-gap semiconductors and Weyl semimetals can create electronhole pairs when the total charge Ze of the impurity exceeds a value Zce. The particles of one charge escape to infinity, leaving a screening space charge. The result is that the observable dimensionless impurity charge Q∞ is less than Z but greater than Zc. There is a corresponding effect fo...

Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors.

A symmetric van der Pauw disk of homogeneous nonmagnetic indium antimonide with an embedded concentric gold inhomogeneity is found to exhibit room-temperature geometric magnetoresistance as high as 100, 9100, and 750,000 percent at magnetic fields of 0.05, 0.25, and 4.0 teslas, respectively. For inhomogeneities of sufficiently large diameter relative to that of the surrounding disk, the resista...